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30V / 20A / 99 mOhm HDTMOS E-FET[tm] High Density Power FET DPAK sourface mount P-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. datasheets / pdf      to go to the quick order [PayPal] - click the basket   delivery options project - below   0+ 2+ 5+ 10+ 20+ 50+ 100+ 200+ 500+ 1.000+ 2.000+ 5.000+ 10.000+ quantity : price : buy fast track = retail price   [in £] = quantity of parts in stock   [pieces] others EOL - stock - for fast shipment : VN02H   OPB608B   LMX2316TMDX   K6T1008C2EDB55   IXFH26N50Q   XTR115UA   If You have any questions - call us ! call us at: +44 77   6141 2343 or write to us - email ! database care