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RF Power Transistor, 30 W, 136 220 MHz, CASE 211 07
The RF Line NPN Silicon Power Transistors . . . designed for 12.5 volt large– signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% Diffused Emitter Resistor Ballasting Characterized to 220 MHz Load Mismatch at High Line and Overdrive Conditions |
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