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RF Power Transistor, 30 W, 136 220 MHz, CASE 211 07

The RF Line
NPN Silicon Power Transistors
. . . designed for 12.5 volt large– signal power amplifiers in commercial and industrial equipment.
  • High Common Emitter Power Gain
  • Specified 12.5 V, 175 MHz Performance
    Output Power = 30 Watts
    Power Gain = 10 dB
    Efficiency = 60%
  • Diffused Emitter Resistor Ballasting
  • Characterized to 220 MHz
  • Load Mismatch at High Line and Overdrive Conditions
  • datasheets / pdf    


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