RF Power Field-Effect Transistor N-Channel 175 MHz, 50 W, 12.5 V, TO 272
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large& 241 signal, common source amplifier applications in 12.5 volt mobile FM equipment.
Specified Performance @ 175 MHz, 12.5 Volts
Output Power ó 50 Watts
Power Gain ó 12 dB
Efficiency ó 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Broadband& 241 Full Power Across the Band: 135& 241 175 MHz
Broadband Demonstration Amplifier Information Available
Upon Request
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. |
