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RF Power Field-Effect Transistor N-Channel 150W 150MHz , CASE 211-11 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large– signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB Typ Efficiency = 45% Typ Superior High Order IMD IMD d3 150 W PEP - 32 dB [Typ] IMD d11 150 W PEP - 60 dB [Typ] 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR datasheets / pdf      to go to the quick order [PayPal] - click the basket   delivery options project - below   0+ 2+ 5+ 10+ 20+ 50+ 100+ 200+ 500+ 1.000+ 2.000+ 5.000+ 10.000+ quantity : price : buy fast track = retail price   [in £] = quantity of parts in stock   [pieces] further components for fast delivery : Quarz 14.250.450 Hz   FQS4900   LM759MH   DMC16230-NY-LY-D   2N3904   RTC65271   If You have any questions - call us ! call us at: +44 77   6141 2343 or send us RFQ by email ! database care